Product-TCE

The photomask is an essential device to be used in the manufacturing process of integrated circuits such as LSI.

It is a transparent glass plate (composite quartz) on which extremely fine microcircuit patterns are etched on the light shielded film and plays a role as a master when circuits are printed on silicon wafers.

The patterns on the photomask are reduced and optically transferred onto wafers to form fine patterns.

Mask patterns are formed on a blank substrate based on circuit pattern data using electron beam lithography technology.

The photomask is fabricated through etching, resist strip, cleaning, measurement, and inspection processes.

TCE has been supporting the semiconductor industry through its manufacture of photomasks since 1997.

At the same time, in order to satisfy the demand for much finer patterns on evolving LSIs, we are continuously developing phase-shifting masks and more advanced photomask products using the next generation of exposure technology.

In the manufacturing process of semiconductors such as LSI, a pattern on the photomask is reduced and exposed on a silicon wafer a number of times while the stepper (i.e. reduced projection type exposure machine) shifts, transferring multiple element patterns on each wafer.

1.Photomask Blanks
	Absorber layers (chrome etc.) are deposited over the ultra fine polished high purity synthetic quartz substrate, forming a light shielding layer with a thickness of tens of nanometers. Above quartz substrate is called a photomask blanks.

2.Exposure(Patterning)
	Photoresist (photosensitive resin) is uniformly coated over the surface of a photomask blanks, then a LSI circuit pattern is written by using electron beam or laser beam.

3.Development
	The portions of resist exposed to the electron beam are removed through development process (positive tone resist). Depending on the type of resist, there are cases in which non-exposed portions of resist are removed on the contrary (negative tone resist).

4.Etching
	The portions from which resist was removed by the development process, the absorber layer is exposed then this layer is etched through a chemical reaction by dry etching.

5.Resist Removal
	A photomask is completed upon removal of the resist and cleaned, and is finally shipped after passing several strict inspection processes.

Binary Masks
	Structure of binary mask is simple; it is a photomask blank covered with patterned layer of opaque material. Its transmission characteristics are either transparent or non-transparent. Binary mask is used for building a pattern in which line width being larger than the exposure wave length. However, it is learnt that the binary mask is superior to the halftone phase shift mask used for immersion lithography for 32nm half-pitch or beyond. Toppan and its blanks vendor have co-developed new type of binary blanks with superior workability (OMOG: Opaque MoSi on Glass). They have managed to create blanks for binary masks with better CD performance and higher resolution.

Binary Masks

Structure of binary mask is simple; it is a photomask blank covered with patterned layer of opaque material. Its transmission characteristics are either transparent or non-transparent. Binary mask is used for building a pattern in which line width being larger than the exposure wave length.
However, it is learnt that the binary mask is superior to the halftone phase shift mask used for immersion lithography for 32nm half-pitch or beyond.
Toppan and its blanks vendor have co-developed new type of binary blanks with superior workability (OMOG: Opaque MoSi on Glass). They have managed to create blanks for binary masks with better CD performance and higher resolution.

Phase Shift Masks
Phase-shifting mask (PSM) has achieved improved wafer printability with higher resolution and increased DOF (Depth of Focus), by controlling the phase shift and the transmission rate. This is a standard technology for lithography in which line width being smaller than the exposure wave length. Most well known PSM is Halftone mask (Attenuated PSM) and Levenson mask (Alternating PSM).

Phase Shift Masks

Phase-shifting mask (PSM) has achieved improved wafer printability with higher resolution and increased DOF (Depth of Focus), by controlling the phase shift and the transmission rate. This is a standard technology for lithography in which line width being smaller than the exposure wave length.

Most well known PSM is Halftone mask (Attenuated PSM) and Levenson mask (Alternating PSM).

Half-tone Phase Shift Mask
	Half-tone mask includes chrome layer and semitransparent layer that shift the phase angle of an incoming light by 180 degree. When light passing through materials, its speed is altered, which in turn, its phase angle is shifted. This material, a semitransparent layer is called "phase shifter". Half-tone masks have achieved higher resolution, utilizing the interference of light created by a phase differences between with-phase shifter and without-phase shifter on the photomask blank.

Half-tone Phase Shift Mask

Half-tone mask includes chrome layer and semitransparent layer that shift the phase angle of an incoming light by 180 degree.

When light passing through materials, its speed is altered, which in turn, its phase angle is shifted. This material, a semitransparent layer is called "phase shifter".

Half-tone masks have achieved higher resolution, utilizing the interference of light created by a phase differences between with-phase shifter and without-phase shifter on the photomask blank.

2017	SEMINAR	TITLE
	TTF	Introduction to Toppan Technology Forum 2017
	TTF	Development Trend of Product and IP with Logic NVM
	TTF	Introduction of Integrated Design Technology for Non-volatile Memory
	TTF	Reflecting on EUV mask and Lithography
	TTF	Challenges and Opportunities for Integrated Circuit Industry in New Formats
	TTF	Toppan Advanced Mask Technology
	TTF	Turning Strategy into Reality - A New Era in Asia for the Photomask Industry
	TTF	TCE Photomask Technical and Manufacturing Efforts

2016	SEMINAR	TITLE
	TTF	Introduction to Toppan Technology Forum 2016
	TTF	Reshaping Semiconductor Ecosystem
	TTF	RF Front-End Design Technology
	TTF	TCE Advanced Mask Technologies
	TTF	Toppan Asia-Pacific Photomask Strategy
	TTF	Toppan Advanced Photomask Technologies and Roadmap
	TTF	Concurrence and Challenge in IoT in Taiwan Semiconductor Industry
	TTF	EUV Mask Technology

2015	SEMINAR	TITLE
	TTF	Touch Free Mask Data Handling
	TTF	TCE Advanced Photomask Technologies
	TTF	Toppan Advanced Photomask Technologies
	TTF	Advanced Photomask Blanks Technology
	TTF	EUV Mask Technology
	TTF	Toppan Sensor IC Development Business

2014	SEMINAR	TITLE
	TTF	The Challenges for Mask Data Handling
	TTF	TCE Mask Technology and Strategy for Taiwan Customer Support
	TTF	Overcoming the Tribulations of 7nm patterning
	TTF	Optimized Solution for the Memory Layout Design
	TTF	Introduction to Toppan On-Chip Color Filter Technology
	TTF	Foundry Solution-UMC Advanced Technology

2013	SEMINAR	TITLE
	TTF	TCE Advanced Mask Technology
	TTF	Toppan Mask Roadmap and Strategy for Taiwan Customer Support
	TTF	EUV Mask Technology
	TTF	Lithography Trend and Requirements for Mask Technology
	TTF	Design Support for IDM,Foundry and Fabless DH
	TTF	Overview of Toppan Technologies for Electronics Products
	TTF	IS Double Helix Tracking Electronic Industry?

2012	SEMINAR	TITLE
	TTF	Data Accuracy Enhancement in TCE
	TTF	TCE Advanced Mask Technology
	TTF	Toppan Mask Roadmap and Strategy for Taiwan Customer Support
	TTF	EUV Mask Technology
	TTF	How 3D Integrated Circuits Will Change Your World
	TTF	Lithography Trend and Requirements for Mask Technology
	TTF	Design Support for IDM,Foundry and Fabless DH
	TTF	Toppan R&D Activities for Electronics Products
	TTF	Asia ICT Top4 Classic-The Co-optition among Taiwan,Japan,China and Korea

2011	SEMINAR	TITLE
	TTF	3S() Mask Data Center 3S: Speedy, Secure and Straight
	TTF	Advanced Inspection, Repair and Cleaning Technology
	TTF	Wafer Design and Process Support through Photomask Related Technology
	TTF	Industry Trend and Mask Development for EUV Lithography
	TTF	Advanced PSM and Binary Photomask Development
	TTF	Advanced Photomask Technology and Roadmap
	TTF	New Trends and Perspectives on the Integrated Design society

2010	SEMINAR	TITLE
	TTF	Customer Oriented MMRC.
	TTF	New Process Set-up and Performance for Advanced Mask Technology.
	TTF	The Fusion of Metrology and Inspection :Challenges and Solutions
	TTF	Study and Improvement Approach to 193nm Radiation Damage of Attenuated Phase-Shift Mask.
	TTF	Next Generation Binary and Attenuated Phase-Shift Mask.
	TTF	Current Status of EUVL Mask Development.
	TTF	TCE's Overview and Roadmap.
	TTF	Toppan's Advanced Mask Technology and Roadmap.

2009	SEMINAR	TITLE
	PMJ	Reduction of MRC Error Review Time through the Simplified and Classified MRC Result

2008	SEMINAR	TITLE
	TTF	Advanced Inspection and Cleaning Technology
	TTF	Advanced EB and Process Technology
	TTF	Mask reliability issues in wafer fab
	TTF	CD Metrology for 32nm and Beyond
	TTF	Toppan’s Approach to DFM
	TTF	Design Support for IDM, Foundry and Fabless DH - What TDC can do for your design?
	TTF	Advanced reticles - where the shore of technology meets waves of cost

2007	SEMINAR	TITLE
	TTF	Activity for Growing Haze Prevention
	TTF	Reliable Measurement Method for Complicated OPC Pattern
	TTF	Development and Evaluation of New Binary Mask Blanks for 45nm and 32nm Technologies ( 2007 PMJ Best Paper Award)
	TTF	Toppan’s Approach to DFM
	TTF	Design Support for Foundry, IDM and Fabless DH
	TTF	Post Structure Fulfill Using Chrome-less Phase Shift Mask
	TTF	IMEC lithography activities for 45nm node and beyond: mask impact
	TTF	BM-Toppan Joint Development Project Overview
	TTF	The Dresden/AMTC Role in Toppan's Global Strategy
	TTF	Technologies for High-end Photomasks
	PMJ	Application of exposure simulation system to CD control investigation at 130-nm photolithography node
	PMJ	Influence of Environmental Components on Haze Growth
	PMJ	The Effect between Absorber Profile and Wafer Print Process Window in ArF 6% Att. PSM Mask

2006	SEMINAR	TITLE
	TTF	Study of Chromeless Mask Quartz Defect Detection Capability for 80-nm Post Structure
	TTF	The latest evaluation of inspection technology
	TTF	The less is the more —Non-chemical cleaning technology for sub-90nm node photomask manufacturing
	TTF	Migrating from 193nm to 13.5nm-Development status of EUV mask
	TTF	Wherever you are, we are! — Providing Global Solutions for Photomask Supplies and Services to Our Customers
	TTF	Approach to next generation-TCE advanced technology
	TTF	EUV Lithography at IMEC — position in our roadmap and progress on reticles
	TTF	2006 BACUS Best Poster Award-Revisiting Mask Contact Hole Measurements
	TTF	Approaching the extreme-Toppan Global technology support
	TTF	DRAM Industry Trend & Strategies
	TTF	Maximizing Customer Benefits-Toppan's Strategy for Photomask Business
	BACUS	Incoming Database Verification and Management for Mask Data Preparation
	BACUS	Study of Chrome-less Mask Quartz Defect Detection Capability for 80nm Post Structure
	BACUS	The Effect between Mask Blank Flatness and Wafer Print Process Window in ArF 6% Att. PSM Mask
	BACUS	Non-chemical cleaning technology for sub-90nm design node photomask manufacturing
	PMJ	Hybrid mask (CPL-attPSM) technology for DRAM
	PMJ	Advanced hybrid-mask process development

2005	SEMINAR	TITLE
	TTF	Advanced Repair Technology — Repair Craftsmanship
	TTF	Resolution Enhancement Technology — Approach to Next Generation Lithography
	TTF	Performance of New Thin Resist and Thin Cr Photomask Process
	TTF	A Hope in Data Desert – OASIS
	TTF	Advanced Mask Options: A Global Perspective
	TTF	The Lithography Challenges in DRAM
	TTF	65nm Reticle Development Progress — Are You Ready in 65nm Production?
	TTF	Developing Consumer Products in Future Technology
	TTF	Toppan's Strategy in Photomask Business
	TTF	Challenges for 65nm/45nm Technology Nodes
	BACUS	CAR evaluation For 65nm
	BACUS	Real-World Impact of Inverse Lithography Technology
	PMJ	Application of CPL Mask for whole Chip 65nm DRAM Patterning
	PMJ	Effects of Mask Bias on the Mask Error Enhancement Factor (MEEF) for Low k1 Lithography
	PMJ	New slit scan developer system for advanced 45nm node mask making

2004	SEMINAR	TITLE
	Photonics Asia	Improving the performance of E-beam 2nd writing in mask alignment accuracy and pattern faultless for CPLTM technology
	BACUS	Reduce Process Bias of Photomask Manufacturing for Next Generation Lithography
	SPIE	Correlating reticle pinhole defects to wafer printability for the 90nm node lithography using advanced RET
	PMJ	Evaluation, Reduction and Monitoring of Progressive Defect on 193nm Reticles for Low-k1 Process

2003	SEMINAR	TITLE
	BACUS	Low k1 lithography patterning options for 90nm node
	BACUS	Effect of dry etching pattern profile on the chromeless phase lithography (CPL) mask
	BACUS	90nm production by using AAPSM with practical image imbalance correction
	PMJ	Investigation of phase variation impact on CPL PSM for Low k1 imaging
	PMJ	Practical approach for AAPSM image imbalance correlation for Sub-100nm lithography

2002	SEMINAR	TITLE
	PMJ	The Comparison Between Positive and Negative 50Kev E-beam CAR for 0.10um Generation
	PMJ	The Process of Manufacturing & Inspection of High-end (Ternary) Tritone EAPSMs Reticles for 0.13um Design Rule generation
	PMJ	The Comparison and Correlation of VSS Simulation Results Using Image from Different Inspection Tools