Product
Photomask

Leading the way to next generation reticle technology.

As the semiconductor industry technology migrated from generation to generation, TCE provided photomask solutions that assisted customers in meeting the complex challenges of these new technologies. Now, as the industry moves toward even more advanced process technology, TCE is providing customers with the knowledge, resources, products, and solutions necessary for success at the sub 100-nanometer level.

Today, TCE is one of Asian-based photomask providers continual offering nanometer process node research, development and test production. TCE and parent company Toppan have made continual investments in advanced E-beam writers, and own and operate state-of-the-art EBM6000 and EBM7500T E-beam writers. These devices will help TCE's mass production of 28 nanometer node and facilitate development of advanced photomask solutions at 14 nanometer process node and below.

The photomask is an essential device to be used in the manufacturing process of integrated circuits such as LSI.

It is a transparent glass plate (composite quartz) on which extremely fine microcircuit patterns are etched on the light shielded film and plays a role as a master when circuits are printed on silicon wafers.

The patterns on the photomask are reduced and optically transferred onto wafers to form fine patterns.

Mask patterns are formed on a blank substrate based on circuit pattern data using electron beam lithography technology.

The photomask is fabricated through etching, resist strip, cleaning, measurement, and inspection processes.

TCE has been supporting the semiconductor industry through its manufacture of photomasks since 1997.

At the same time, in order to satisfy the demand for much finer patterns on evolving LSIs, we are continuously developing phase-shifting masks and more advanced photomask products using the next generation of exposure technology.

 

In the manufacturing process of semiconductors such as LSI, a pattern on the photomask is reduced and exposed on a silicon wafer a number of times while the stepper (i.e. reduced projection type exposure machine) shifts, transferring multiple element patterns on each wafer.
1.Photomask Blanks
Absorber layers (chrome etc.) are deposited over the ultra fine polished high purity synthetic quartz substrate, forming a light shielding layer with a thickness of tens of nanometers. Above quartz substrate is called a photomask blanks.
2.Exposure(Patterning)
Photoresist (photosensitive resin) is uniformly coated over the surface of a photomask blanks, then a LSI circuit pattern is written by using electron beam or laser beam.
3.Development
The portions of resist exposed to the electron beam are removed through development process (positive tone resist). Depending on the type of resist, there are cases in which non-exposed portions of resist are removed on the contrary (negative tone resist).
4.Etching
The portions from which resist was removed by the development process, the absorber layer is exposed then this layer is etched through a chemical reaction by dry etching.
5.Resist Removal
A photomask is completed upon removal of the resist and cleaned, and is finally shipped after passing several strict inspection processes.
Binary Masks

Structure of binary mask is simple; it is a photomask blank covered with patterned layer of opaque material. Its transmission characteristics are either transparent or non-transparent. Binary mask is used for building a pattern in which line width being larger than the exposure wave length.
However, it is learnt that the binary mask is superior to the halftone phase shift mask used for immersion lithography for 32nm half-pitch or beyond.
Toppan and its blanks vendor have co-developed new type of binary blanks with superior workability (OMOG: Opaque MoSi on Glass). They have managed to create blanks for binary masks with better CD performance and higher resolution.

Phase Shift Masks 

Phase-shifting mask (PSM) has achieved improved wafer printability with higher resolution and increased DOF (Depth of Focus), by controlling the phase shift and the transmission rate. This is a standard technology for lithography in which line width being smaller than the exposure wave length.

Most well known PSM is Halftone mask (Attenuated PSM) and Levenson mask (Alternating PSM).

Half-tone Phase Shift Mask

Half-tone mask includes chrome layer and semitransparent layer that shift the phase angle of an incoming light by 180 degree.

When light passing through materials, its speed is altered, which in turn, its phase angle is shifted. This material, a semitransparent layer is called "phase shifter".

Half-tone masks have achieved higher resolution, utilizing the interference of light created by a phase differences between with-phase shifter and without-phase shifter on the photomask blank.

2017 SEMINAR TITLE
TTF Introduction to Toppan Technology Forum 2017
TTF Development Trend of Product and IP with Logic NVM
TTF Introduction of Integrated Design Technology​ ​for Non-volatile Memory
TTF Reflecting on EUV mask and Lithography
TTF Challenges and Opportunities for Integrated Circuit Industry in New Formats
TTF Toppan Advanced Mask Technology
TTF Turning Strategy into Reality - A New Era in Asia for the Photomask Industry
TTF TCE Photomask Technical and Manufacturing Efforts
2016 SEMINAR TITLE
TTF Introduction to Toppan Technology Forum 2016
TTF Reshaping Semiconductor Ecosystem
TTF RF Front-End Design Technology
TTF TCE Advanced Mask Technologies
TTF Toppan Asia-Pacific Photomask Strategy
TTF Toppan Advanced Photomask Technologies and Roadmap
TTF Concurrence and Challenge in IoT in Taiwan Semiconductor Industry
TTF EUV Mask Technology
2015 SEMINAR TITLE
TTF Touch Free Mask Data Handling
TTF TCE Advanced Photomask Technologies
TTF Toppan Advanced Photomask Technologies
TTF Advanced Photomask Blanks Technology
TTF EUV Mask Technology
TTF Toppan Sensor IC Development Business
2014 SEMINAR TITLE
TTF The Challenges for Mask Data Handling
TTF TCE Mask Technology and Strategy for Taiwan Customer Support
TTF Overcoming the Tribulations of 7nm patterning
TTF Optimized Solution for the Memory Layout Design
TTF Introduction to Toppan On-Chip Color Filter Technology
TTF Foundry Solution-UMC Advanced Technology
2013 SEMINAR TITLE
TTF TCE Advanced Mask Technology
TTF Toppan Mask Roadmap and Strategy for Taiwan Customer Support
TTF EUV Mask Technology
TTF Lithography Trend and Requirements for Mask Technology
TTF Design Support for IDM,Foundry and Fabless DH
TTF Overview of Toppan Technologies for Electronics Products
TTF IS Double Helix Tracking Electronic Industry?
2012 SEMINAR TITLE
TTF Data Accuracy Enhancement in TCE
TTF TCE Advanced Mask Technology
TTF Toppan Mask Roadmap and Strategy for Taiwan Customer Support
TTF EUV Mask Technology
TTF How 3D Integrated Circuits Will Change Your World
TTF Lithography Trend and Requirements for Mask Technology
TTF Design Support for IDM,Foundry and Fabless DH
TTF Toppan R&D Activities for Electronics Products
TTF Asia ICT Top4 Classic-The Co-optition among Taiwan,Japan,China and Korea
2011 SEMINAR TITLE
TTF 3S(*) Mask Data Center *3S: Speedy, Secure and Straight
TTF Advanced Inspection, Repair and Cleaning Technology
TTF Wafer Design and Process Support through Photomask Related Technology
TTF Industry Trend and Mask Development for EUV Lithography
TTF Advanced PSM and Binary Photomask Development
TTF Advanced Photomask Technology and Roadmap
TTF New Trends and Perspectives on the Integrated Design society
2010 SEMINAR TITLE
TTF Customer Oriented MMRC.
TTF New Process Set-up and Performance for Advanced Mask Technology.
TTF The Fusion of Metrology and Inspection :Challenges and Solutions
TTF Study and Improvement Approach to 193nm Radiation Damage of Attenuated Phase-Shift Mask.
TTF Next Generation Binary and Attenuated Phase-Shift Mask.
TTF Current Status of EUVL Mask Development.
TTF TCE's Overview and Roadmap.
TTF Toppan's Advanced Mask Technology and Roadmap.
2009 SEMINAR TITLE
PMJ Reduction of MRC Error Review Time through the Simplified and Classified MRC Result
2008 SEMINAR TITLE
TTF Advanced Inspection and Cleaning Technology
TTF Advanced EB and Process Technology
TTF Mask reliability issues in wafer fab
TTF CD Metrology for 32nm and Beyond
TTF Toppan’s Approach to DFM
TTF Design Support for IDM, Foundry and Fabless DH - What TDC can do for your design?
TTF Advanced reticles - where the shore of technology meets waves of cost
2007 SEMINAR TITLE
TTF Activity for Growing Haze Prevention
TTF Reliable Measurement Method for Complicated OPC Pattern
TTF Development and Evaluation of New Binary Mask Blanks for 45nm and 32nm Technologies ( 2007 PMJ Best Paper Award)
TTF Toppan’s Approach to DFM
TTF Design Support for Foundry, IDM and Fabless DH
TTF Post Structure Fulfill Using Chrome-less Phase Shift Mask
TTF IMEC lithography activities for 45nm node and beyond: mask impact
TTF BM-Toppan Joint Development Project Overview
TTF The Dresden/AMTC Role in Toppan's Global Strategy
TTF Technologies for High-end Photomasks
PMJ Application of exposure simulation system to CD control investigation at 130-nm photolithography node
PMJ Influence of Environmental Components on Haze Growth
PMJ The Effect between Absorber Profile and Wafer Print Process Window in ArF 6% Att. PSM Mask
2006 SEMINAR TITLE
TTF Study of Chromeless Mask Quartz Defect Detection Capability for 80-nm Post Structure
TTF The latest evaluation of inspection technology
TTF The less is the more
—Non-chemical cleaning technology for sub-90nm node photomask manufacturing
TTF Migrating from 193nm to 13.5nm-Development status of EUV mask
TTF Wherever you are, we are!
— Providing Global Solutions for Photomask Supplies and Services to Our Customers
TTF Approach to next generation-TCE advanced technology
TTF EUV Lithography at IMEC — position in our roadmap and progress on reticles
TTF 2006 BACUS Best Poster Award-Revisiting Mask Contact Hole Measurements
TTF Approaching the extreme-Toppan Global technology support
TTF DRAM Industry Trend & Strategies
TTF Maximizing Customer Benefits-Toppan's Strategy for Photomask Business
BACUS Incoming Database Verification and Management for Mask Data Preparation
BACUS Study of Chrome-less Mask Quartz Defect Detection Capability for 80nm Post Structure
BACUS The Effect between Mask Blank Flatness and Wafer Print Process Window in ArF 6% Att. PSM Mask
BACUS Non-chemical cleaning technology for sub-90nm design node photomask manufacturing
PMJ Hybrid mask (CPL-attPSM) technology for DRAM
PMJ Advanced hybrid-mask process development
2005 SEMINAR TITLE
TTF Advanced Repair Technology — Repair Craftsmanship
TTF Resolution Enhancement Technology — Approach to Next Generation Lithography
TTF Performance of New Thin Resist and Thin Cr Photomask Process
TTF A Hope in Data Desert – OASIS
TTF Advanced Mask Options: A Global Perspective
TTF The Lithography Challenges in DRAM
TTF 65nm Reticle Development Progress — Are You Ready in 65nm Production?
TTF Developing Consumer Products in Future Technology
TTF Toppan's Strategy in Photomask Business
TTF Challenges for 65nm/45nm Technology Nodes
BACUS CAR evaluation For 65nm
BACUS Real-World Impact of Inverse Lithography Technology
PMJ Application of CPL Mask for whole Chip 65nm DRAM Patterning
PMJ Effects of Mask Bias on the Mask Error Enhancement Factor (MEEF) for Low k1 Lithography
PMJ New slit scan developer system for advanced 45nm node mask making
2004 SEMINAR TITLE
Photonics Asia Improving the performance of E-beam 2nd writing in mask alignment accuracy and pattern faultless for CPLTM technology
BACUS Reduce Process Bias of Photomask Manufacturing for Next Generation Lithography
SPIE Correlating reticle pinhole defects to wafer printability for the 90nm node lithography using advanced RET
PMJ Evaluation, Reduction and Monitoring of Progressive Defect on 193nm Reticles for Low-k1 Process
2003 SEMINAR TITLE
BACUS Low k1 lithography patterning options for 90nm node
BACUS Effect of dry etching pattern profile on the chromeless phase lithography (CPL) mask
BACUS 90nm production by using AAPSM with practical image imbalance correction
PMJ Investigation of phase variation impact on CPL PSM for Low k1 imaging
PMJ Practical approach for AAPSM image imbalance correlation for Sub-100nm lithography
2002 SEMINAR TITLE
PMJ The Comparison Between Positive and Negative 50Kev E-beam CAR for 0.10um Generation
PMJ The Process of Manufacturing & Inspection of High-end (Ternary) Tritone EAPSMs Reticles for 0.13um Design Rule generation
PMJ The Comparison and Correlation of VSS Simulation Results Using Image from Different Inspection Tools